| Mfg Part Number: K6T1008C2EDB7000 | Manufacturer: Samsung Semiconductor Inc |
| NSN : 5962-01-408-2869 | NIIN : 014082869 |
| Item Name : microcircuit memory | CAGE Code : 0DUN9 |
| FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available K6T1008C2EDB7000 NSN part. This part number K6T1008C2EDB7000 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Samsung Semiconductor Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of K6T1008C2EDB7000 NSN component, and we carry recently requested NSN components such as 5962014082869. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Samsung Semiconductor Inc. If you are interested in this particular item, we invite you to begin the purchasing process for K6T1008C2EDB7000 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-408-2869 Item Description: Microcircuit Memory | 5962 | 014082869 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| K6T1008C2EDB7000 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AGAV | III END ITEM IDENTIFICATION | REMOTE TERMINAL UNIT, WLB-RTU (1 TO 10) |
| SR-5 | THE MANUFACTURERS DATA | |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | 0.0 TO 70.0 DEG CELSIUS |
| FEAT | SPECIAL FEATURES | 128K-WORD X 8-BIT CAPACITY; 70 NS ACCESS TIME; DIRECT TTL COMPATIBILITY; BATTERY BACK-UP OPERATION CAPABILITY |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 FLAT LEADS |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 131072 |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| SR-5 | DESIGN CONTROL REFERENCE | HM628128LP-7 |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQZP | INPUT CIRCUIT PATTERN | 8 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM |
| SR-5 | MANUFACTURERS CODE | 62786 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CZER | MEMORY DEVICE TYPE | RAM |
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