Mfg Part Number: 44158-1 | Alternate P/N: 441581 |
Manufacturer: Raytheon Company | NSN : 5962-01-111-0437 |
NIIN : 011110437 | Item Name : microcircuit memory |
CAGE Code : 05869 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 44158-1 NSN part. This part number 44158-1 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Raytheon Company. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of 44158-1 NSN component, and we carry recently requested NSN components such as 5962011110437. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Raytheon Company. If you are interested in this particular item, we invite you to begin the purchasing process for 44158-1 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 302 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 145 INCHES MINIMUM AND 0 175 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND WENABLE AND PROGRAMMABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY512 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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