Mfg Part Number: SD211 883B | Alternate P/N: SD211883B |
Manufacturer: Philips Semiconductors Inc | NSN : 5961-01-037-4477 |
NIIN : 010374477 | Item Name : transistor |
CAGE Code : 18324 | FSC : 5961 Semiconductor Devices and Associated Hardware |
Thank you for your interest in our available SD211 883B NSN part. This part number SD211 883B is a Transistor listed under the FSC 5961 Semiconductor Devices and Associated Hardware, and it is manufactured by Philips Semiconductors Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of SD211 883B NSN component, and we carry recently requested NSN components such as 5961010374477. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Philips Semiconductors Inc. If you are interested in this particular item, we invite you to begin the purchasing process for SD211 883B today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 15.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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