Mfg Part Number: MT1259-12 | Alternate P/N: MT125912 |
Manufacturer: Micron Corporation | NSN : 5962-01-271-5534 |
NIIN : 012715534 | Item Name : microcircuit memory |
CAGE Code : 65389 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available MT1259-12 NSN part. This part number MT1259-12 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Micron Corporation. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of MT1259-12 NSN component, and we carry recently requested NSN components such as 5962012715534. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Micron Corporation. If you are interested in this particular item, we invite you to begin the purchasing process for MT1259-12 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 250 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 130 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND LOW POWER AND MONOLITHIC |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CRHL | BIT QUANTITY262144 |
MEMORY | CSWJ | WORD QUANTITY262144 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 0 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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