| Mfg Part Number: MK4027J-3MIL | Alternate P/N: MK4027J3MIL |
| Manufacturer: Leidos Inc | NSN : 5962-01-092-4618 |
| NIIN : 010924618 | Item Name : microcircuit memory |
| CAGE Code : 1N0X4 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available MK4027J-3MIL NSN part. This part number MK4027J-3MIL is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Leidos Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of MK4027J-3MIL NSN component, and we carry recently requested NSN components such as 5962010924618. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Leidos Inc. If you are interested in this particular item, we invite you to begin the purchasing process for MK4027J-3MIL today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 740 INCHES MINIMUM AND 0 780 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 250 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 170 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND WENABLE AND WSTORAGE AND HIGH SPEED AND POSITIVE OUTPUTS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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