| Mfg Part Number: CD40105BF 3 | Alternate P/N: CD40105BF3 |
| Manufacturer: Intersil Corporation | NSN : 5962-01-116-8673 |
| NIIN : 011168673 | Item Name : microcircuit memory |
| CAGE Code : 34371 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available CD40105BF 3 NSN part. This part number CD40105BF 3 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Intersil Corporation. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of CD40105BF 3 NSN component, and we carry recently requested NSN components such as 5962011168673. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Intersil Corporation. If you are interested in this particular item, we invite you to begin the purchasing process for CD40105BF 3 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.105 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | JSS/ROCC 05869 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND SYNCHRONOUS AND EXPANDABLE AND LOW POWER AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 7 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | MO-001-AC JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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