| Mfg Part Number: MB822IE N | Alternate P/N: MB822IEN |
| Manufacturer: Fujitsu Microelectronics Inc | NSN : 5962-01-132-3124 |
| NIIN : 011323124 | Item Name : microcircuit memory |
| CAGE Code : 61271 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available MB822IE N NSN part. This part number MB822IE N is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Fujitsu Microelectronics Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of MB822IE N NSN component, and we carry recently requested NSN components such as 5962011323124. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Fujitsu Microelectronics Inc. If you are interested in this particular item, we invite you to begin the purchasing process for MB822IE N today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 740 INCHES MINIMUM AND 0 770 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 285 INCHES MINIMUM AND 0 291 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 160 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1000 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 085 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND HIGH PERFORMANCE AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY4096 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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