| Mfg Part Number: G8509.B01 | Alternate P/N: G8509B01 |
| Manufacturer: Bae Systems Information And Electronic Systems Integration Inc | NSN : 5962-01-240-6660 |
| NIIN : 012406660 | Item Name : microcircuit memory |
| CAGE Code : 94117 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available G8509.B01 NSN part. This part number G8509.B01 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Information And Electronic Systems Integration Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of G8509.B01 NSN component, and we carry recently requested NSN components such as 5962012406660. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Bae Systems Information And Electronic Systems Integration Inc. If you are interested in this particular item, we invite you to begin the purchasing process for G8509.B01 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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