Mfg Part Number: 310132P1 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc |
NSN : 5962-00-530-4905 | NIIN : 005304905 |
Item Name : microcircuit memory | CAGE Code : 94117 |
FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 310132P1 NSN part. This part number 310132P1 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Information And Electronic Systems Integration Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of 310132P1 NSN component, and we carry recently requested NSN components such as 5962005304905. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Bae Systems Information And Electronic Systems Integration Inc. If you are interested in this particular item, we invite you to begin the purchasing process for 310132P1 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 250 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 520 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES NOMINAL |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND BIPOLAR AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND WDECODED OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMP-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT94117-310132 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTING GE |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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