Mfg Part Number: 310294P3 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc |
NSN : 5962-00-506-7606 | NIIN : 005067606 |
Item Name : microcircuit memory | CAGE Code : 94117 |
FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 310294P3 NSN part. This part number 310294P3 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Information And Electronic Systems Integration Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of 310294P3 NSN component, and we carry recently requested NSN components such as 5962005067606. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Bae Systems Information And Electronic Systems Integration Inc. If you are interested in this particular item, we invite you to begin the purchasing process for 310294P3 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 220 INCHES MINIMUM AND 1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 520 INCHES MINIMUM AND 0 550 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 090 INCHES MINIMUM AND 0 150 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND HIGH SPEED AND WDECODED OUTPUT AND BIPOLAR AND PROGRAMMABLE AND EXPANDABLE AND WIRE-OR OUTPUTS AND WENABLE AND WDISABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMP-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATOR-0-015-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTGOLD |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC0 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | PMLC | PRECIOUS MATERIAL AND LOCATIONTERMINALS GOLD |
MEMORY | PRMT | PRECIOUS MATERIALGOLD |
MEMORY | TEST | TEST DATA DOCUMENT94117-310294 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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