Mfg Part Number: 1372PD1124 | Manufacturer: Bae Systems Information And Electronic Systems Integration I |
NSN : 5962-01-372-6628 | NIIN : 013726628 |
Item Name : microcircuit memory | CAGE Code : 72314 |
FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 1372PD1124 NSN part. This part number 1372PD1124 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 020 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYRAMS SCRAMS |
MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC5 00 INPUT PICOFARADS NOMINAL AND 7 00 OUTPUT PICOFARADS NOMINAL |
MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND STATIC OPERATION AND HIGH PERFORMANCE AND WENABLE AND HIGH IMPEDANCE AND WDISABLE AND HERMETICALLY SEALED |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAQ | BODY LENGTH0 860 INCHES MINIMUM AND 0 960 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC15 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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