| Mfg Part Number: AB 1 30 9835 | Alternate P/N: AB1309835 |
| Manufacturer: Bae Systems Gcs International Ltd | NSN : 5962-01-350-2139 |
| NIIN : 013502139 | Item Name : microcircuit memory |
| CAGE Code : K4244 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available AB 1 30 9835 NSN part. This part number AB 1 30 9835 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Gcs International Ltd. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of AB 1 30 9835 NSN component, and we carry recently requested NSN components such as 5962013502139. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Bae Systems Gcs International Ltd. If you are interested in this particular item, we invite you to begin the purchasing process for AB 1 30 9835 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITSDIGITALBIPOLARFIRST-IN FIRST-OUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM INPUT |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
| MEMORY | ADAT | BODY WIDTH0 310 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING990 0 MILLIWATTS |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN7 INPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510 |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND BIPOLAR |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CZER | MEMORY DEVICE TYPEFIRST-IN FIRST-OUT |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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