| Mfg Part Number: 312A5165P1 | Manufacturer: Bae Systems Controls Inc |
| NSN : 5962-01-303-8874 | NIIN : 013038874 |
| Item Name : microcircuit memory | CAGE Code : 89954 |
| FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 312A5165P1 NSN part. This part number 312A5165P1 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Bae Systems Controls Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of 312A5165P1 NSN component, and we carry recently requested NSN components such as 5962013038874. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Bae Systems Controls Inc. If you are interested in this particular item, we invite you to begin the purchasing process for 312A5165P1 today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 540 INCHES MINIMUM AND 0 560 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 458 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN26 INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 LEADLESS |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 120 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-12 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
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