Mfg Part Number: 15-1326286-1 | Alternate P/N: 1513262861 |
Manufacturer: Advanced Micro Devices Inc | NSN : 5962-01-375-7492 |
NIIN : 013757492 | Item Name : microcircuit memory |
CAGE Code : 34335 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available 15-1326286-1 NSN part. This part number 15-1326286-1 is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Advanced Micro Devices Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAU | BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONHACRMPE REACT BASIC |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268 |
MEMORY | ADAT | BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS |
MEMORY | CZZZ | MEMORY CAPACITY128K X 8 |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | NHCF | NUCLEAR HARDNESS CRITICAL FEATUREHARDENED |
MEMORY | SPCL | SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS |
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