| Mfg Part Number: AM27S29 BRA | Alternate P/N: AM27S29BRA |
| Manufacturer: Advanced Micro Devices Inc | NSN : 5962-01-111-0905 |
| NIIN : 011110905 | Item Name : microcircuit memory |
| CAGE Code : 34335 | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in our available AM27S29 BRA NSN part. This part number AM27S29 BRA is a Microcircuit Memory listed under the FSC 5962 Microcircuits Electronic, and it is manufactured by Advanced Micro Devices Inc. At Internet of Components, all of our stock and inventory are available for purchase today, ready to ship with short lead times and competitive pricing. Whether you are in need of parts that are new, used, or obsolete, our team of industry experts is readily available 24/7x365 to fulfill all of your operational
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Internet of Components is a premier supplier of AM27S29 BRA NSN component, and we carry recently requested NSN components such as 5962011110905. We strive to only provide our customers with quality parts, which is why we choose to source our inventory from thousands of global manufacturers such as Advanced Micro Devices Inc. If you are interested in this particular item, we invite you to begin the purchasing process for AM27S29 BRA today by filling out and submitting an Instant RFQ. Once received, a member of our staff will review and reach out to you in 15 minutes or less to provide a personalized quote that caters towards your individual needs. Get started on the purchasing process today and see how we are revolutionizing the purchasing process.
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.000 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.165 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 800.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 07187-4038322 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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